s mhop microelectronics c orp. a stu/d417s product summary v dss i d r ds(on) (m ) typ -40v -43a 23 @ vgs=-4.5v 14 @ vgs=-10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. p-channel logic level enhancement mode field effect transistor www.samhop.com.tw aug,23,2010 1 details are subject to change without notice. g g s s s t u s e ri e s to - 2 5 2 aa ( d - p a k ) g g s s d d s t d s e ri e s to - 2 5 1 ( i - p a k ) ver 1.2 symbol v ds v gs i dm e as w a p d c 27 -55 to 150 i d units parameter -40 -43 -130 v v 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics mj absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a sigle pulse avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja t c =25 c 3 c/w thermal resistance, junction-to-case r jc a t c =70 c -34.4 t c =70 c w 42 a a 225 green product
symbol min typ max units bv dss -40 v 1 i gss 100 na v gs(th) -1.7 v 14 g fs 44 s v sd c iss 2620 pf c oss 360 pf c rss 265 pf q g 51 nc 91 nc q gs 325 nc q gd 112 t d(on) 65 ns t r 6.2 ns t d(off) 19 ns t f ns gate-drain charge v ds =-20v,v gs =0v switching characteristics gate-source charge v dd =-20v i d =-1.0a v gs =-10v r gen =6ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-21.5a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-21.5a v ds =-10v , i d =-21.5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs ,i d =-250ua v ds =-32v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =-250ua reverse transfer capacitance on characteristics v gs =-4.5v , i d =-16.8a 23 m ohm f=1.0mhz v ds =-20v,i d =-21.5a, v gs =-10v drain-source diode characteristics v gs =0v,i s = -5a -0.8 -1.3 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v .(see figure13) stu/d417s www.samhop.com.tw aug,23,2010 2 nc v ds =-20v,i d =-21.5a,v gs =-4.5v 31 _ _ c -2 -3 c _ b ver 1.2
stu/d417s www.samhop.com.tw aug,23,2010 3 -i d , drain current(a) -v ds , drain-to-source voltage(v) figure 1. output characteristics -v gs , gate-to-source voltage(v) figure 2. transfer characteristics -i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized -i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature tj( c) ver 1.2 35 28 21 14 7 0 0 0.9 5.4 4.5 3.6 2.7 1.8 tj=125 c -55 c 25 c 30 25 20 15 10 5 1 1 v gs =10v v gs =4.5v 1.5 1.4 1.3 1.2 1.1 1.0 0 0 100 75 25 50 125 150 v gs =-10v i d =-21.5a v gs =-4.5v i d =-16.8a 70 56 42 28 14 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =-3v v gs =-4v v gs =-3.5v v gs =-10v v gs =-4.5v 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =-250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =-250ua v gs =-5v 14 28 42 56 70
www.samhop.com.tw aug,23,2010 4 r ds(on) (m ) -v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage -is, source-drain current(a) -v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) -v ds , drain-to-source voltage(v) figure 9. capacitance -v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics -i d , drain current(a) -v ds , drain-source voltage(v) figure 12. maximum safe operating area stu/d417s ver 1.2 0.1 1 10 100 100 10 1 r d s (on) li m it v gs =-10v single pulse t a =25 c 36 30 24 18 12 6 0 24 68 10 0 i d =-21.5a 25 c 125 c 75 c 10 1 60 0 0.3 0.6 0.9 1.2 1.5 25 c 75 c 125 c crss css o css i 3600 3000 2400 1800 1200 600 0 10 15 20 25 30 0 5 10 8 6 4 2 0 01020 30 40 50 60 70 80 v ds =-20v i d =-21.5a 100 10 60 1000 1 110 100 vds=-20v,id=-1a vgs=-10v td(on) td(off ) tf tr dc 0.1 1ms 100u s 10ms
t p v (br )dss i as r g i as 0.01 t p d.u.t l v ds + - v dd dr ive r a 15v 20v f igure 13a. figure 13b. u nc l am p ed s in d u ct i ve t e t ci r c u i t o fr m w ave s u nc l am p ed in d u ct i ve stu/d417s www.samhop.com.tw aug,23,2010 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r ? ja (t)=r (t) * r ? ja 2. r ? ja =s ee datas heet 3. t jm- t a =p dm *r ? ja (t) 4. duty cycle, d=t 1 /t 2 single pulse ver 1.2
stu/d417s ver 1.2 www.samhop.com.tw aug,23,2010 6 package outline dimensions to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 13.700 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 15.300 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.539 0.602 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
stu/d417s ver 1.2 www.samhop.com.tw aug,23,2010 7 to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067
ver 1.2 www.samhop.com.tw aug,23,2010 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 -0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 "a " to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h stu/d417s
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